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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 44N80P
VDSS ID25
RDS(on)
trr
= 800 V = 39 A 190 m ns 250
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 TC = 25C
Maximum Ratings 800 800 30 40 39 100 22 80 3.4 10 694 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S G = Gate S = Source D D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute IISOL < 1 mA, 10 seconds Mounting torque Terminal torque
300 2500 3000
1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 30 g
Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages
Symbol Test Conditions (TJ = 25C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 800 A VDS = VGS, ID = 8 mA VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 200 50 1.5 190 V V nA A mA m
VGS = 10 V, ID = 0.5 ITD25, Note 1
* Easy to mount * Space savings * High power density
DS99503E(06/06)
(c) 2006 IXYS All rights reserved
IXFN 44N80P
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 27 43 12 VGS = 0 V, VDS = 25 V, f = 1 MHz 910 30 28 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 1 (External) 22 75 27 200 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 67 65 S nF pF pF ns ns ns ns nC nC nC 0.18 C/W 0.05 C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 20 V; ID = 0.5 ID25, Note 1
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 22 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V
Characteristic Values TJ = 25C unless otherwise specified) Min. Typ. Max. 44 100 1.5 250 0.8 8.0 A A V ns C A
Notes: 1. Pulse test, t 300 s, duty cycle d 2%
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 6,771,478 B2
IXFN 44N80P
Fig. 1. Output Characte r is tics @ 25 C
45 40 35 V GS = 10V 7V 80 6V 70 100 90 V GS = 10V 7V
Fig. 2. Exte nde d Output Characte ris tics @ 25 C
I D - Amperes
I D - Amperes
30 25 20 15
60 50 40 30 20 10 0 5V 6V
5V 10 5 0 0 1 2 3 4 5 6 7 8
0
3
6
9
12
15
18
21
24
27
30
V D S - V olts Fig. 3. Output Characte r is tics @ 125 C
45 40 35 6V V GS = 10V 7V 2.6 2.4 V GS = 10V
V D S - V olts Fig. 4. RDS(on ) Nor m alize d to ID = 22A V alue vs . Junction Te m pe rature
R D S ( o n ) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 I D = 22A I D = 44A
I D - Amperes
30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 5V
-50
-25
0
25
50
75
100
125
150
V D S - V olts Fig. 5. RDS(on) Nor m alize d to ID = 22A V alue vs . Drain Curr e nt
2.4 2.2 V GS = 10V TJ = 125 C
44 40 36
TJ - Degrees Centigrade
Fig . 6. Dr ain Cu r r e n t vs . Cas e T e m p e r atu r e
R D S ( o n ) - Normalized
2
32
I D - Amperes
TJ = 25 C
1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 70 80 90 100
28 24 20 16 12 8 4 0 -50 -25 0 25 50 75 100 125 150
I D - A mperes
TC - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFN 44N80P
Fig. 7. Input Adm ittance
70 60 50 90 80 70 TJ = - 40 C 25 C 125 C
Fig. 8. Trans conductance
I D - Amperes
40 30 20 10 0 3.5 4
TJ = 125 C 25 C - 40 C
- Siemens
fs
60 50 40 30 20 10 0
g
4.5
5
5.5
6
6.5
0
10
20
30
40
50
60
70
80
V G S - V olts Fig. 9. Sour ce Cur re nt vs . Sour ce -To-Drain V oltage
140 120 8 100 7 10 9 V DS = 400V I D = 22A I G = 10m A
I D - A mperes
Fig. 10. Gate Charge
I S - Amperes
V G S - Volts
TJ = 125 C TJ = 25 C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
80 60 40 20 0
6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200
V S D - V olts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100000 f = 1MH z C is s
1. 00
Fig . 12. M axim u m T r an s ie n t T h e r m al Re s is tan ce
Capacitance - PicoFarads
10000
C os s 1000
R( t h ) J C - C / W
0. 10
100
C rss
10 0 5 10 15 20 25 30 35 40
0. 01 0. 001 0. 01 0.1 1 10
V DS - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
Puls e Width - Sec onds

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